vishay siliconix dg2612, dg2613 document number: 74339 s-83070-rev. c, 29-dec-08 www.vishay.com 1 low-voltage, low r on , spdt audio switch with negative swing capability description the dg2612, dg2613 is a low on-resistance, single-pole/ double-throw monolithic cmos analog switch with negative signal swing capability. it is designed for low voltage applications. the dg2612, dg2 613 is ideal for portable and battery powered equipment, requiring high performance and efficient use of board space. in additional to the low on-resistance (1.0 at 2.7 v), the dg2613 has a typical off isolation and crosstalk of - 67 db and - 73 db respectively. the dg2612, dg2613 is built on vishay siliconix?s low voltage process. break-before-make is guaranteed. as a committed partner to the community and the environment, vishay siliconix manufactures this product with the lead (pb)-free device terminations. for analog switching products manufactured wit h 100 % matte tin device terminations, the lead (pb)-free ?-e3? suffix is being used as a designator. features ? low voltage operation (1.8 v to 5.5 v) ? low on-resistance - r on : 1.0 at 2.7 v ? high bandwidth benefits ? negative signal swing capability ? shunt switch to eliminate switching noise ? simplified design with direct dc coupling ? space saving sc-89 package applications ? cellular phones ? portable multimedia players ? pdas and hand-held devices ? laptop computers functional block diagram and pin configuration notes: a. signals on nc, no, or com or in exceedi ng v+ will be clamped by internal diodes. limit forward diode current to maximum curr ent ratings. b. all leads welded or soldered to pc board. c. derate 2.15 mw/c above 70 c. dg2612 dg2613 1 i nn o (so u rce 1 ) 2 v + 3 g n d i n v + g n d 6 5 com 4 n c (so u rce 2 ) n o (so u rce 1 ) com n c (so u rce 2 ) 1 2 3 6 5 4 pin 1 ax x = date/lot tracea b ility code top v ie w de v ice marking: dx top v ie w de v ice marking: ex truth table logic nc no 0 on off 1offon commercial ordering information temp range package part number - 40 c to 85 c sc-89 (sot-666) lead (pb)-free with tape and reel dg2612dx-t1-e3 DG2613DX-T1-E3 absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit reference gnd v+ - 0.3 to + 6 v in a - 0.3 to (v+ + 0.3) com, nc, no a (v+ - 6) to (v+ + 0.3) continuous current (no, nc, com pins) 150 ma peak current (pulsed at 1 ms, 10 % duty cycle) 300 storage temperature d suffix - 65 to 150 c power dissipation (packages) b sc-89 c 172 mw
www.vishay.com 2 document number: 74339 s-83070-rev. c, 29-dec-08 vishay siliconix dg2612, dg2613 notes: a. room = 25 c, full = as determined by the operating suffix. b. typical values are for design aid only, not guaranteed nor subject to production testing. c. the algebraic convention whereby the most negative value is a minimum and the most po sitive a maximum, is used in this data sheet. d. guarantee by design, nor s ubjected to production test. e. v in = input voltage to perform proper function. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (v+ = 3 v) parameter symbol test conditions otherwise unless specified v+ = 3 v, 10 %,v in = 0.5 v or 1.4 v e temp. a limits - 40 c to 85 c unit min. b typ. c max. b analog switch analog signal range d v no , v nc , v com full v+ - 5.5 v+ v on-resistance r on v+ = 2.7 v, v com = - 1 v/0 v/1 v/2 v i no , i nc = 10 ma room full 1.0 1.4 1.6 r on match d r on room 0.1 r on flatness d r on flatness room 0.3 shunt switch resistance r sh i no or i nc = 10 ma, v+ = 2.7 v, dg2612 only full 150 300 switch off leakage current i no(off) i nc(off) v+ = 3.3 v, v no , v nc = 1 v/3 v, v com = 3 v/1 v room full - 2 - 100 2 100 na i com(off) room full - 2 - 100 2 100 channel-on leakage current i com(on) v+ = 3.3 v, v no , v nc = v com = 1 v/3 v room full - 2 - 100 2 100 digital control input high voltage v inh v+ = 1.8 v to 2.0 v full 1.0 v v+ = 2.7 v to 3.6 v 1.4 v+ = 4.2 v to 5.5 v 2.0 input low voltage v inl v+ = 1.8 v to 2.0 v 0.4 v+ = 2.7 v to 3.6 v 0.5 v+ = 4.2 v to 5.5 v 0.8 input capacitance c in full 5 pf input current i inl or i inh v in = 0 or v+ full 1 1 a dynamic characteristics tu r n - o n t i m e t on v no or v nc = 1.5 v, r l = 50 , c l = 35 pf room full 34 60 63 ns turn-off time t off room full 10 35 37 break-before-make time t bbm room 4 16 charge injection d (dg2613) q inj c l = 1 nf, v gen = 0 v, r gen = 0 room 2.4 pc off-isolation d oirr r l = 50 , c l = 5 pf, f = 100 khz dg2612 room - 61 db crosstalk d x ta l k room - 67 off-isolation d oirr r l = 50 , c l = 5 pf, f = 100 khz dg2613 room - 67 db crosstalk d x ta l k room - 73 n o , n c off capacitance d c no(off) c nc(off) v in = 0 or v+, f = 1 mhz room 36 pf channel-on capacitance d c on room 95 power supply power supply range v+ 1.8 5.5 v power supply current i+ v in = 0 or v+ 0.01 1.0 a
document number: 74339 s-83070-rev. c, 29-dec-08 www.vishay.com 3 vishay siliconix dg2612, dg2613 typical characteristics t a = 25 c, unless otherwise noted r on vs. v com and supply voltage supply current vs. temperature leakage current vs. temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 - 4 - 3 - 2 - 1 0 1 2 3 4 5 6 v+ = 1.8 v v+ = 2.7 v v+ = 3.0 v v+ = 3.6 v v+ = 2.0 v v co m - analog voltage (v) r on - on-resistance ( ) t = 25 c i s = 10 ma v+ = 4.5 v v+ = 5.0 v v+ = 5.5 v 10 100 1000 10 000 100 000 - 60 - 40 - 20 0 20 40 60 80 100 temperature ( c) i+ - supply current (pa) dg2612 v in = 0 v v + = 3.6 v v + = 5.5 v 1 10 100 1000 10 000 100 000 - 60 - 40 - 20 0 20 40 60 80 100 v+ = 2.7 v te m p erature ( c ) leakage current (pa) i com(off) i com(on) i no(off) r on vs. analog voltage and temperature supply current vs. temperature switching time vs. temperature and supply voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 3 - 2 - 1 0 1 2 3 4 v+ = 2.7 v, i s = 10 ma + 85 c + 25 c - 40 c v co m - analog voltage (v) r on - on-resistance ( ) 10 100 1000 10 000 100 000 - 60 - 40 - 20 0 20 40 60 8 0 100 temperat u re ( c) i+ - s u pply c u rrent (pa) dg2613 v i n = 0 v v + = 3.6 v v + = 5.5 v 0 5 10 15 20 25 30 35 40 - 60 - 40 - 20 0 20 40 60 80 100 temperature (c) t on , t off , - switching time (ns) t off v+ = 3.0 v t on v+ = 3.0 v
www.vishay.com 4 document number: 74339 s-83070-rev. c, 29-dec-08 vishay siliconix dg2612, dg2613 typical characteristics t a = 25 c, unless otherwise noted test circuits insertion loss, off-isol ation, crosstalk vs. frequency charge injection vs. analog voltage - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 10 100k 1m 10 m 100m 1g fre qu ency (hz) loss, oirr, x talk (db) loss v + = 3.0 v r l = 50 dg2612 oirr x ta l k - 20 0 10 20 30 40 - 4.0 - 3.0 - 2.0 - 1.0 0.0 1.0 2.0 3.0 4.0 5.0 dg2613 - 10 v+ = 2 v v+ = 3 v v+ = 5 v v co m - analog voltage (v) q - charge injection (pc) insertion loss, off-isolation, crosstalk vs. frequency switching threshold vs. supply voltage - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 10 100k 1m 10m 100m 1g fre qu ency (hz) loss, oirr, x talk (db) oirr loss v + = 3.0 v r l = 50 dg2613 x talk 0 0.5 1 1.5 2 1.0 2.0 3.0 4.0 5.0 6.0 v+ - supply voltage (v) v t - switching threshold (v) figure 1. switching time switch input c l (includes fixture and stray capacitance) v+ in no or nc c l 35 pf com logic input r l 50 v ou t gnd v+ 50 % 0 v 0 v logic input switch output t on t off logic "1" = switch on logic input waveforms inverted for switches that have the opposite logic sense. 0 v switch output v ou t = v co m r l r l + r on + 3 v 0.9 x v ou t t r < 5 ns t f < 5 ns
document number: 74339 s-83070-rev. c, 29-dec-08 www.vishay.com 5 vishay siliconix dg2612, dg2613 test circuits figure 2. break-before-make interval c l (includes fixture and stray capacitance) nc v no no v nc 0 v 3 v 0 v logic input switch output v o v nc = v no t r < 5 ns t f < 5 ns 90 % t d t d in com v+ gnd v+ c l 35 pf v o r l 50 figure 3. charge injection off on on in v out v out q = v out x c l c l com r gen v out 3 v in v gen gnd v+ v+ in depends on switch configuration: input polarity determined by sense of switch. + nc or no figure 4. off-isolation in gnd nc or no 0 v, 2.4 v 10 nf com off isolation = 20 log v nc/ no v com r l analyzer v+ v+ com
www.vishay.com 6 document number: 74339 s-83070-rev. c, 29-dec-08 vishay siliconix dg2612, dg2613 test circuits vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74339 . figure 5. channel off/on capacitance nc or no f = 1 mhz in com gnd 0 v, 2.4 v meter hp4192a impedance analyzer or equivalent 10 nf v+ v+
e d notes: 1. all dimensions are in millimeters. 2. package outline exclusive of mold flash and metal burr. 3. package outline inclusive of plating. 4. maximum webbing flash remain 0.075 mm. c m 0.10 a b b1 a b e1 l2 e pin 1 a a3 c e1 l1 l3 b (4 ) package information vishay siliconix document number: 72067 28-nov-05 www.vishay.com 1
dim min nom max min nom max a 0.56 ? 0.60 0.022 ? 0.024 a3 0.13 0.17 0.18 0.005 0.006 0.007 b 0.17 ? 0.25 0.006 ? 0.010 b1 ? 0.27 0.34 ? 0.011 0.013 d 1.50 1.66 1.70 0.059 0.065 0.067 e 1.50 1.65 1.70 0.059 0.065 0.067 e1 1.10 1.20 1.30 0.043 0.047 0.051 e 0.50 bsc 0.020 bsc e 1 0.20 ? ? 0.008 ? ? l1 0.11 0.19 0.26 0.004 0.007 0.010 l2 0.10 0.23 0.30 0.004 0.009 0.012 l3 0.05 0.10 ? 0.002 0.004 ? 8 10 12 8 10 12 ecn: s-52444?rev. d, 28-nov-05 dwg: 5891 *use millimeters as the primary measurement
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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